DocumentCode
3316376
Title
A 2000 V-non-punch-through-IGBT with dynamical properties like a 1000 V-IGBT
Author
Laska, T. ; Miller, G.
Author_Institution
Siemens AG, Munchen, Germany
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
807
Lastpage
810
Abstract
A 2000-V IGBT (insulated-gate bipolar transistor) based on the simple concept of the non-punch-through IGBT is presented. The devices were processed on bulk silicon material without any lifetime-killing steps. On-state voltage and turn-off losses are nearly the same as for 1000-V IGBTs. The forward-bias safe-operating area of the devices is a rectangle up to 1800 V; no latchup occurs up to the short-circuit saturation current.<>
Keywords
insulated gate bipolar transistors; power transistors; semiconductor device testing; 2000 V; bulk Si material; dynamical properties; forward-bias safe-operating area; nonpunchthrough IGBT; on state voltage; short-circuit saturation current; turn-off losses; Insulated gate bipolar transistors; Insulation; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237039
Filename
237039
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