• DocumentCode
    3316390
  • Title

    Analysis of conductivity in ultra-shallow p+ layers formed by plasma doping

  • Author

    Tsutsui, Kazuo ; Majima, Kenta ; Fukagawa, Yotaro ; Sasaki, Yuichiro ; Okashita, Katsumi ; Tamura, Hideki ; Kakushima, Kuniyuki ; Ito, Hiroyuki ; Mizuno, Bunji ; Iwai, Hiroshi

  • Author_Institution
    Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
  • fYear
    2005
  • fDate
    7-8 June 2005
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    In this work, the shallow B doped layers formed by plasma doping and activation process using spike-RTA or flash lamp annealing (FLA) were characterized by Hall measurement, and carrier mobility and activation rate in these layers are evaluated in conjunction with doping method and activation process.
  • Keywords
    Hall effect; boron; carrier mobility; electrical conductivity; elemental semiconductors; incoherent light annealing; plasma materials processing; rapid thermal annealing; semiconductor doping; silicon; Hall measurement; Si:B; activation process; carrier mobility; electrical conductivity; flash lamp annealing; plasma doping; shallow B doped layers; spike-RTA; ultrashallow p+ layers; Annealing; Conductivity; Doping; Helium; Ion implantation; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma properties; Plasma transport processes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
  • Print_ISBN
    4-9902158-6-9
  • Type

    conf

  • DOI
    10.1109/IWJT.2005.203887
  • Filename
    1598673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3316390