Title :
Characterization and modeling of the temperature dependence of lateral DMOS transistors for high-temperature applications of power ICs
Author :
Dolny, G. ; Nostrand, G. ; Hill, K.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
A comprehensive experimental characterization of lateral DMOS electrical parameters over the temperature range 30-300 degrees C is presented. Simple analytic models are used to explain the observed behavior and to offer physical insight into the effects of temperature on LDMOS performance. A novel test structure is utilized to unambiguously separate channel-region effects from drift-region effects. It is shown that the LDMOS channel mobility follows a T/sup -2.5/ temperature dependence, which is significantly more severe than the T/sup -1.5/ dependence of conventional CMOS channel mobility. Other key temperature-dependent parameters include the threshold voltage, on-state resistance, saturation current, breakdown voltage, and leakage current, which places a fundamental limitation on the high-temperature operation of the LDMOS transistor.<>
Keywords :
carrier mobility; high-temperature techniques; insulated gate field effect transistors; leakage currents; power transistors; semiconductor device models; semiconductor device testing; 30 to 300 degC; LDMOS performance; analytic models; breakdown voltage; channel mobility; channel-region effects; drift-region effects; high-temperature applications; lateral DMOS transistors; leakage current; modeling; on-state resistance; power ICs; saturation current; temperature dependence; test structure; threshold voltage; Leakage current; Performance analysis; Temperature dependence; Temperature distribution; Testing; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237043
