A review of the status of diamond and silicon carbide devices for high-power, -temperature, and -frequency applications

A review of the status of material and device development in both diamond and SiC is presented. The deposition of monocrystalline diamond at or below 1 atm at T<1273 K has been achieved on diamond substrates; the film is polycrystalline on all other substrates, but the achievement is no less significant. Recent SiC research has culminated in a host of solid-state devices. It is noted that the recent developments in thin-film deposition and bulk growth techniques coupled with the positive results from doping, oxidation, and ohmic and rectifying contact studies for alpha (6H)-SiC have catalyzed a growing, international effort to develop microelectronic devices from this material for high-temperature, -power, and -frequency applications and radiation hardness. To this end, operable p-n junctions, Schottky diodes, MESFETs, MOSFETs, and HBTs have been produced with encouraging characteristics.<>