Impact of C implantation on electrical properties of NiSi/Si contact

Author

Nakatsuka, Osamu ; Okubo, Kazuya ; Sakai, Akira ; Ogawa, Masaki ; Zaima, Shigeaki

Author_Institution

EcoTopia Sci. Inst., Nagoya Univ., Japan

fYear

2005

fDate

7-8 June 2005

Firstpage

95

Lastpage

96

Abstract

We investigated the influence of C implantation on electrical properties of NiSi/Si contact. Increase in sheet resistance of NiSi is effectively suppressed due to preventing the agglomeration of NiSi with C implantation. C into Si also reduces contact resistance in NiSi/p⁺-Si system with pile-up of B at the NiSi/Si interface. C implantation promises the high thermal robustness of NiSi and the low resistance in NiSi/Si system for future Si devices.

Keywords

carbon; contact resistance; elemental semiconductors; ion implantation; nickel alloys; semiconductor-metal boundaries; silicon; silicon alloys; B pile-up; C implantation; NiSi-Si:C; NiSi/Si contact; Si devices; agglomeration; contact resistance; electrical properties; sheet resistance; thermal robustness; Atomic measurements; Contact resistance; Current density; Materials science and technology; Rapid thermal annealing; Robustness; Schottky diodes; Silicides; Temperature dependence; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on

Print_ISBN

4-9902158-6-9

Type

conf

DOI

10.1109/IWJT.2005.203892

Filename

1598678