Title :
Impact of C implantation on electrical properties of NiSi/Si contact
Author :
Nakatsuka, Osamu ; Okubo, Kazuya ; Sakai, Akira ; Ogawa, Masaki ; Zaima, Shigeaki
Author_Institution :
EcoTopia Sci. Inst., Nagoya Univ., Japan
Abstract :
We investigated the influence of C implantation on electrical properties of NiSi/Si contact. Increase in sheet resistance of NiSi is effectively suppressed due to preventing the agglomeration of NiSi with C implantation. C into Si also reduces contact resistance in NiSi/p+-Si system with pile-up of B at the NiSi/Si interface. C implantation promises the high thermal robustness of NiSi and the low resistance in NiSi/Si system for future Si devices.
Keywords :
carbon; contact resistance; elemental semiconductors; ion implantation; nickel alloys; semiconductor-metal boundaries; silicon; silicon alloys; B pile-up; C implantation; NiSi-Si:C; NiSi/Si contact; Si devices; agglomeration; contact resistance; electrical properties; sheet resistance; thermal robustness; Atomic measurements; Contact resistance; Current density; Materials science and technology; Rapid thermal annealing; Robustness; Schottky diodes; Silicides; Temperature dependence; Thermal resistance;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203892
