Title :
Formation of atomically flat interface and effect of silicidation condition on Schottky contact characteristics in ErSi1.7/Si(100) system
Author :
Tsuchiya, Yoshinori ; Irisawa, Toshifumi ; Yagishita, Atsushi ; Koga, Junji
Author_Institution :
Adv. LSI Technol. Lab., Yokohama, Japan
Abstract :
We have investigated the Schottky barrier height of ErSi1.7 and suitable formation process to achieve the ideal interface. Atomically flat interface has been achieved by high-temperature (700°C) furnace annealing, as well as oxide-block W-cap layer. Under this condition, Schottky barrier height value for electron of lower than 0.4 eV has been obtained. In addition, careful control of silicidation anneal is quite important to achieve ideal ErSi1.7/Si interface.
Keywords :
Schottky barriers; annealing; elemental semiconductors; erbium alloys; semiconductor-metal boundaries; silicon; silicon alloys; 700 C; ErSi1.7-Si; Schottky barrier height; Schottky contact; atomically flat interface; high-temperature furnace annealing; oxide-block W-cap layer; silicidation condition; Annealing; Conductivity; Electrons; Furnaces; MOSFET circuits; Morphology; Schottky barriers; Silicidation; Silicides; Temperature;
Conference_Titel :
Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
Print_ISBN :
4-9902158-6-9
DOI :
10.1109/IWJT.2005.203893
