• DocumentCode
    3316474
  • Title

    Formation of atomically flat interface and effect of silicidation condition on Schottky contact characteristics in ErSi1.7/Si(100) system

  • Author

    Tsuchiya, Yoshinori ; Irisawa, Toshifumi ; Yagishita, Atsushi ; Koga, Junji

  • Author_Institution
    Adv. LSI Technol. Lab., Yokohama, Japan
  • fYear
    2005
  • fDate
    7-8 June 2005
  • Firstpage
    97
  • Lastpage
    98
  • Abstract
    We have investigated the Schottky barrier height of ErSi1.7 and suitable formation process to achieve the ideal interface. Atomically flat interface has been achieved by high-temperature (700°C) furnace annealing, as well as oxide-block W-cap layer. Under this condition, Schottky barrier height value for electron of lower than 0.4 eV has been obtained. In addition, careful control of silicidation anneal is quite important to achieve ideal ErSi1.7/Si interface.
  • Keywords
    Schottky barriers; annealing; elemental semiconductors; erbium alloys; semiconductor-metal boundaries; silicon; silicon alloys; 700 C; ErSi1.7-Si; Schottky barrier height; Schottky contact; atomically flat interface; high-temperature furnace annealing; oxide-block W-cap layer; silicidation condition; Annealing; Conductivity; Electrons; Furnaces; MOSFET circuits; Morphology; Schottky barriers; Silicidation; Silicides; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2005. Extended Abstracts of the Fifth International Workshop on
  • Print_ISBN
    4-9902158-6-9
  • Type

    conf

  • DOI
    10.1109/IWJT.2005.203893
  • Filename
    1598679
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3316474