DocumentCode
3316534
Title
Advanced electron mobility model of MOS inversion layer considering 2D-degenerate electron gas physics
Author
Ishizaka, M. ; Iizuka, T. ; Ohi, S. ; Fukuma, M. ; Mikoshiba, H.
Author_Institution
NEC Corp., Kawasaki, Japan
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
763
Lastpage
766
Abstract
A novel mobility model for electrons in the Si-MOS inversion layer is proposed on the basis of two-dimensional degenerate electron gas physics. The mobility is found to be affected by Pauli´s exclusion principle and the Fermi-Dirac distribution function. The universal relation between mobility and effective field strength in the normal direction can be consistently explained by the model, including its temperature dependence.<>
Keywords
carrier mobility; electron gas; inversion layers; metal-insulator-semiconductor structures; Fermi-Dirac distribution function; MOS inversion layer; Pauli exclusion principle; Si-SiO/sub 2/; effective field strength; electron mobility model; subband energy levels; temperature dependence; two-dimensional degenerate electron gas physics; Distribution functions; Electron mobility; Physics; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237049
Filename
237049
Link To Document