Title :
Short-gate-length epitaxial-channel, self-aligned GaAs MESFETs with very large k-factor
Author :
Jackson, T.N. ; Pepper, G. ; DeGelormo, J.F. ; Kuech, T.F.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The fabrication of short-gate-length, epitaxial-channel self-aligned GaAs MESFETs with very large k-factor is described. It is shown that devices with gate lengths of less than 0.25 mu m can be fabricated with well-controlled short-channel effects. Finally, it is demonstrated that self-aligned devices with gate lengths as short as 50 nm can retain reasonable FET characteristics for operation near maximum transconductance.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; 0.25 micron; 50 nm; GaAs; MESFETs; epitaxial-channel; fabrication; large k-factor; self-aligned devices; short-gate-length; FETs; Fabrication; Gallium arsenide; MESFETs; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237057
