Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMT

Author

Nguyen, L.D. ; Jelloian, L.M. ; Thompson, M. ; Lui, M.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

499

Lastpage

502

Abstract

The authors report on the fabrication and characterization of a high-performance 80-nm self-aligned T-gate AlInAs/GaInAs high electron mobility transistor (SAGHEMT). The 80 nm*50 mu m devices reported exhibit good pinchoff characteristics, high transconductance (g/sub m/=1150 mS/mm), low output conductance (g/sub ds/=120 mS/mm at RF), and state-of-the-art current gain cutoff frequency (f/sub T/=250 GHz). Modeling and analysis indicate that it is possible to significantly improve the performance of AlInAs/GaInAs SAGHEMTs by further reducing the gate length and/or optimizing the device structure.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; solid-state microwave devices; 1150 mS; 120 mS; 250 GHz; 50 micron; 80 micron; AlInAs-GaInAs; HEMT; SAGHEMT; characterization; current gain cutoff frequency; fabrication; high electron mobility transistor; high transconductance; low output conductance; modelling; pinchoff characteristics; self-aligned T-gate; Cutoff frequency; Fabrication; HEMTs; MODFETs; Performance analysis; Radio frequency; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237059

Filename

237059