Title :
MOSFET hot-electron gate current calculation by combining energy transport method with Monte Carlo simulation
Author :
Wang, S.-L. ; Goldsman, N. ; Henrickson, L. ; Frey, J.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
The authors describe a novel technique, which combines the attributes of the energy transport and Monte Carlo (ET-MC) methods, for determining MOSFET gate current that arises from electron heating in the device. This method is based upon a non-Maxwellian hot-electron distribution function found from Monte Carlo simulation, and utilizes a physically calculated average electron energy. Calculated values for gate current of a sample submicron MOSFET device show reasonably good agreement with experiment without the need for any fitting parameters. The method allows for excellent resolution of the high-energy tail of the distribution function. Furthermore, the ET-MC model requires less CPU time than standard MC methods, and is therefore appropriate for use in the computer-aided design of semiconductor devices, especially after establishing a database of distribution functions.<>
Keywords :
Monte Carlo methods; digital simulation; electric current; electronic engineering computing; hot carriers; insulated gate field effect transistors; semiconductor device models; CAD applications; MOSFET; Monte Carlo simulation; average electron energy; computer-aided design; electron heating; energy transport method; gate current calculation; hot-electron; model; nonMaxwellian distribution; semiconductor devices; submicron device; Databases; Design automation; Distribution functions; Electrons; Energy resolution; Heating; MOSFET circuits; Monte Carlo methods; Probability distribution; Semiconductor devices;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237071