DocumentCode
3316987
Title
Dark current simulation of InP/InGaAs/InP p-i-n photodiode
Author
Wang, X.D. ; Hu, W.D. ; Chen, X.S. ; Lu, W. ; Tang, H.J. ; Li, T. ; Gong, H.M.
Author_Institution
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai
fYear
2008
fDate
1-4 Sept. 2008
Firstpage
31
Lastpage
32
Abstract
We report on 2D simulations of dark current for InP/InGaAs/InP p-i-n photodiode by Sentaurus DEVICE. Our simulation result is in good agreement with experiment indicating that generation-recombination is the dominant source of dark current at low bias. Effects of absorption layer thicknesses and doping concentrations on dark current are investigated in detail.
Keywords
III-V semiconductors; dark conductivity; doping; electron-hole recombination; gallium arsenide; indium compounds; p-i-n photodiodes; InP-InGaAs-InP; absorption layer thickness; dark current simulation; doping concentration; generation-recombination; p-i-n photodiodes; Absorption; Dark current; Doping; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Physics; Semiconductor process modeling; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location
Nottingham
Print_ISBN
978-1-4244-2307-1
Type
conf
DOI
10.1109/NUSOD.2008.4668227
Filename
4668227
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