Title :
Dark current simulation of InP/InGaAs/InP p-i-n photodiode
Author :
Wang, X.D. ; Hu, W.D. ; Chen, X.S. ; Lu, W. ; Tang, H.J. ; Li, T. ; Gong, H.M.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai
Abstract :
We report on 2D simulations of dark current for InP/InGaAs/InP p-i-n photodiode by Sentaurus DEVICE. Our simulation result is in good agreement with experiment indicating that generation-recombination is the dominant source of dark current at low bias. Effects of absorption layer thicknesses and doping concentrations on dark current are investigated in detail.
Keywords :
III-V semiconductors; dark conductivity; doping; electron-hole recombination; gallium arsenide; indium compounds; p-i-n photodiodes; InP-InGaAs-InP; absorption layer thickness; dark current simulation; doping concentration; generation-recombination; p-i-n photodiodes; Absorption; Dark current; Doping; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Physics; Semiconductor process modeling; Tunneling; Voltage;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668227
