RF amplifiers based on vacuum microelectronic technology

It is noted that the advent of practical high-performance gated vacuum emitters would have a strong impact on RF source technology. Gated emitters, typified by the field emitter array (FEA), combining the advantages of electron transport in vacuum with those of solid-state microfabrication, would enable the development of new classes of density modulated RF sources. These devices may offer the system designer distinct advantages with respect to specific power, efficiency, thermal management, and cost. Although recent advances serve to highlight the potential for the development of FEA-based sources, serious technical obstacles must be addressed before a new RF source technology becomes available. The authors consider these issues and opportunities within the context of present technology and illustrate the range of possible new device types with reference to specific technical issues.<>