• DocumentCode
    3317045
  • Title

    Millimeter-wave high gain crossed-field amplifier

  • Author

    MacMaster, G.H. ; Nichols, L.J.

  • Author_Institution
    Raytheon Co., Waltham, MA, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    963
  • Lastpage
    966
  • Abstract
    A millimeter-wave tube using a dual-slot anode circuit was tested under two different average output levels at a frequency of 34 GHz. The tube was operated with an output of 15.5 kW peak power, 140 W average power with a gain of 10 dB, and at 4 kW peak. 200 W average power at a gain of 8 dB. The enhance the RF gain levels of the device and to provide RF isolation, an RF circuit, introduced into the cathode, is contemplated. Basically, the RF drive power is applied directly to the cathode surface region where it is most effective in electron spoke formation. With the RF input fed to a delay line circuit on the cathode, RF gain of 28 dB has been achieved at S-band with no deterioration in power output or DC-to-RF conversion efficiency.<>
  • Keywords
    cathodes; microwave amplifiers; microwave tubes; 140 to 200 W; 28 dB; 34 GHz; 4 to 15.5 kW; 8 to 10 dB; EHF; MM-wave tube; RF gain levels; S-band; cathode surface region; crossed-field amplifier; delay line circuit; dual-slot anode circuit; high gain; millimeter-wave tube; Anodes; Cathodes; Circuit testing; Delay lines; Electrons; Gain; Millimeter wave circuits; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237080
  • Filename
    237080