Based simulation of high gain and low breakdown voltage InGaAs/InP avalanche photodiode

Author

Lei, W. ; Guo, F.M. ; Lu, W. ; Xiong, D.Y. ; Zhu, Z.Q. ; Chu, J.H.

Author_Institution

Sch. of Inf. Sci. & Technol., East China Normal Univ., Shanghai

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

37

Lastpage

38

Abstract

The InGaAs/InP avalanche photodiode (APD) of thin heterostructure charge layer has studied. Apsys software is used for simulation. For reducing the dark current and achieving higher avalanche gain, a 30 nm InP charge layer and 100 nm InGaAsP grade charge layer used between 400 nm multiplication and absorption layers. Simulation results demonstrated that the low dark current properties and low breakdown voltage (17.5 V) had achieved. The avalanche gain is 88 at reverse bias voltage 17.2 V, and reached 300 at 17.4 V before break down.

Keywords

III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; InGaAs-InP; absorption layer; avalanche gain; charge layer; dark current; heterostructure charge layer; low breakdown voltage avalanche photodiode; multiplication layer; reverse bias voltage; size 100 nm; size 40 nm; size 400 nm; voltage 17.2 V; voltage 17.4 V; Absorption; Analytical models; Avalanche photodiodes; Charge carrier processes; Dark current; Indium gallium arsenide; Indium phosphide; Photonic band gap; Physics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668230

Filename

4668230