Title :
Simulation and design consideration of photoresponse for HgCdTe infrared photodiodes
Author :
Hu, W.D. ; Chen, X.S. ; Quan, Z.J. ; Li, Z.F. ; Liao, Q.J. ; Ye, Z.H. ; Hu, X.N. ; Lu, W.
Author_Institution :
Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., Shanghai
Abstract :
We report on 2D numerical simulations of photo-response characteristic for long-wavelength HgCdTe infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated. Optimal thickness of absorption layers at different absorption length and diffusion length are extracted numerically. An empirical formula is proposed to predict reasonable optimal thickness of absorption layer by theoretically analyzing its correlations with absorption length and diffusion length.
Keywords :
IV-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photodiodes; 2D numerical simulations; HgCdTe; absorption layers; absorption length; infrared photodiodes; Electromagnetic wave absorption; Infrared detectors; Numerical simulation; Passivation; Photodetectors; Photodiodes; Physics; Poisson equations; Substrates; Tunneling;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668231
