Title :
Influence of lateral growth on the optical properties of GaN epitaxial layers
Author :
Gao, Zhiyuan ; Hao, Yue ; Zhang, JinFeng ; Li, Peixian ; Zhang, JinCheng
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an
Abstract :
A model based on the experimental results has been proposed in this work to interpret the lateral growth feature and its effect on the optical properties of GaN epitaxial layers. Under the high lateral growth rate, dislocation located at the grain boundaries is easy to bend into the inner parts of grains, which will deteriorate the light extraction efficiency of the film.
Keywords :
III-V semiconductors; MOCVD; dislocations; gallium compounds; grain boundaries; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; dislocation; epitaxial layers; grain boundaries; lateral growth; optical properties; Atomic layer deposition; Buffer layers; Epitaxial layers; Gallium nitride; Grain boundaries; Low earth orbit satellites; MOCVD; Optical films; Surface morphology; Zinc oxide;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668232
