DocumentCode
3317082
Title
Influence of lateral growth on the optical properties of GaN epitaxial layers
Author
Gao, Zhiyuan ; Hao, Yue ; Zhang, JinFeng ; Li, Peixian ; Zhang, JinCheng
Author_Institution
Sch. of Microelectron., Xidian Univ., Xi´´an
fYear
2008
fDate
1-4 Sept. 2008
Firstpage
41
Lastpage
42
Abstract
A model based on the experimental results has been proposed in this work to interpret the lateral growth feature and its effect on the optical properties of GaN epitaxial layers. Under the high lateral growth rate, dislocation located at the grain boundaries is easy to bend into the inner parts of grains, which will deteriorate the light extraction efficiency of the film.
Keywords
III-V semiconductors; MOCVD; dislocations; gallium compounds; grain boundaries; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; dislocation; epitaxial layers; grain boundaries; lateral growth; optical properties; Atomic layer deposition; Buffer layers; Epitaxial layers; Gallium nitride; Grain boundaries; Low earth orbit satellites; MOCVD; Optical films; Surface morphology; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location
Nottingham
Print_ISBN
978-1-4244-2307-1
Type
conf
DOI
10.1109/NUSOD.2008.4668232
Filename
4668232
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