Title :
High gains observed at room temperature in Stark effect tunneling transistors
Author :
Collins, D.A. ; McGill, T.C.
Author_Institution :
California Inst. of Technol., Pasadena, CA, USA
Abstract :
Attention is given to a Stark effect transistor in which the emitter-collector current is controlled by a base positioned in such a way to provide a small base current. The reported structure uses a GaSb-InAs-AlSb-GaSb heterostructure that has values for beta vastly exceeding that for any tunnel transistor. The devices reported were fabricated by molecular beam epitaxy on GaAs substrates. The heterostructure device was grown on a thick GaSb layer grown on a superlattice of GaSb-GaAs. The results presented strongly suggest that the Stark effect transistor mechanism as implemented in the GaSb-InAs-AlSb heterojunction system has real promise for providing a device technology for the next generation of ultra-small and ultra-fast transistors.<>
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; gallium compounds; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor superlattices; tunnelling; GaAs substrates; GaSb-GaAs; GaSb-InAs-AlSb-GaSb; HBT; Stark effect; emitter-collector current; heterostructure; molecular beam epitaxy; room temperature; superlattice; tunneling transistors; Gallium arsenide; Heterojunctions; Molecular beam epitaxial growth; Stark effect; Substrates; Superlattices; Temperature; Transistors; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237085
