A 10 Gb/s laser driver in InP/InGaAs HBT technology

Author

Jalali, B. ; Banu, M. ; Nottenburg, R.N. ; Humphrey, D.A. ; Montgomery, R.K. ; Hamm, R.A. ; Panish, M.B.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

942

Lastpage

944

Abstract

The first bipolar laser driver integrated circuit to operate at 10 Gb/s is reported. InP/InGaAs heterostructure bipolar transistors (HBTs) were used and a 100 mA peak-to-peak modulation current was achieved. The HBTs were grown using hydride source molecular beam epitaxy. The driver was tested by applying a 10 Gb/s pseudo-random data signal from an Anritsu pattern generator to the input buffer with V/sub cc/=4 V. A clear and open eye-pattern was obtained for the laser driver at 10 Gb/s.<>

Keywords

III-V semiconductors; bipolar integrated circuits; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; laser accessories; optical communication equipment; optical modulation; power integrated circuits; semiconductor junction lasers; 10 Gbit/s; 100 mA; HBT technology; InP-InGaAs; MBE; bipolar laser driver; heterostructure bipolar transistors; hydride source molecular beam epitaxy; integrated circuit; modulation current; Bipolar integrated circuits; Bipolar transistors; Circuit testing; Driver circuits; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit technology; Molecular beam epitaxial growth; Signal generators;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237086

Filename

237086