DocumentCode
3317156
Title
0.1 mu m CMOS devices using low-impurity-channel transistors (LICT)
Author
Aoki, M. ; Ishii, T. ; Yoshimura, T. ; Kiyota, Y. ; Iijima, S. ; Yamanaka, T. ; Kure, T. ; Ohyu, K. ; Nishida, T. ; Okazaki, S. ; Seki, K. ; Shimohigashi, K.
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
939
Lastpage
941
Abstract
It was found that LICTs are very effective for providing low threshold voltages with good turn-offs in 0.1 mu m CMOS devices. Attention is given to device fabrication criteria, key process technologies used, and the features achieved using LICTs.<>
Keywords
CMOS integrated circuits; integrated circuit technology; 0.1 micron; CMOS devices; device fabrication criteria; low threshold voltages; low-impurity-channel transistors; process technologies; submicron devices; CMOS technology; Fabrication; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237087
Filename
237087
Link To Document