Band-gap narrowing and III-V heterostructure FETs

Author

Myers, D.R. ; Lott, J.A. ; Lowney, J.R. ; Klem, J.F. ; Tigges, C.P.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

759

Lastpage

762

Abstract

The magnitude of band-gap narrowing for GaAs-based alloys was calculated, and these results were included in one-dimensional heterojunction device models for strained In/sub 0.15/Ga/sub 0.85/As quantum-well modulation-doped field-effect transistors (MODFETs). Equivalent rigid shifts of as much as 102 meV were obtained for the valence band of depleted p-type In/sub 0.15/Ga/sub 0.85/As doped at 5*10/sup 18//cm/sup 3/. Simulations suggest that band-gap narrowing is most significant for p-channel MODFETs. The predicted effect of band-gap narrowing in p-channel MODFETs is the formation of parasitic conduction in the low-mobility parent dopant region. The parasitic conduction would reduce the intrinsic gain.<>

Keywords

III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; high electron mobility transistors; indium compounds; p-n heterojunctions; semiconductor device models; AlGaAs-InGaAs; FETs; III-V semiconductors; band-gap narrowing; equivalent rigid shifts; intrinsic gain; low-mobility parent dopant region; one-dimensional heterojunction device models; p-channel MODFETs; parasitic conduction; quantum-well modulation-doped field-effect transistors; valence band; Epitaxial layers; FETs; Gallium alloys; HEMTs; Heterojunctions; III-V semiconductor materials; MODFETs; Photonic band gap; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237090

Filename

237090