Simulation and experimental study of the dynamics of arsenic clustering and precipitation including ramp-up and ramp-down conditions

The effect of low thermal-budget anneals and different ramp-down rates on the electrical activation of arsenic has been studied by annealing high-dose (7*10/sup 15/ cm/sup -2/) arsenic implants under various conditions. The experimental results are discussed in the framework of models for the dynamic clustering and declustering of arsenic, and it is shown that detailed consideration of the initial condition for the electrical activation as well as the ramp-up and ramp-down conditions is necessary in order to model the diffusion and electrical activation of the arsenic. A typical annealing cycle for arsenic is considered, and the activation of arsenic is discussed in terms of the various stages in the annealing process.<>