DocumentCode
3317256
Title
A viscous nitride model for nitride/oxide isolation structures
Author
Griffin, P.B. ; Rafferty, C.S.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
741
Lastpage
744
Abstract
The authors evaluate the properties of thin film LPCVD (low-pressure chemical-vapor-deposited) Si/sub 3/N/sub 4/ layers which are often used in local oxidation and shallow trench isolation structures. Experiments to distinguish between elastic nitride behavior and viscous nitride behavior were performed. The results favor a viscous model of nitride deformation over an elastic model, and provide the first experimental estimates of thin-film, Si/sub 3/N/sub 4/ viscosity as a function of temperature. The viscosity of thin nitride films depends on the stoichiometry of the deposited films and is well modeled by an Arrhenius dependence over typical processing temperatures. Based on these results, complex isolation topologies such as SWAMI can be modeled using the viscous models in SUPREM-IV.<>
Keywords
CVD coatings; electronic engineering computing; nitridation; semiconductor device models; silicon compounds; viscosity; Arrhenius dependence; LPCVD; SUPREM-IV; SWAMI; Si/sub 3/N/sub 4/ layers; elastic nitride behavior; isolation topologies; local oxidation; nitride deformation; nitride/oxide isolation structures; shallow trench isolation structures; viscous nitride model; Chemicals; Deformable models; Oxidation; Semiconductor thin films; Temperature dependence; Topology; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237094
Filename
237094
Link To Document