• DocumentCode
    3317256
  • Title

    A viscous nitride model for nitride/oxide isolation structures

  • Author

    Griffin, P.B. ; Rafferty, C.S.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    741
  • Lastpage
    744
  • Abstract
    The authors evaluate the properties of thin film LPCVD (low-pressure chemical-vapor-deposited) Si/sub 3/N/sub 4/ layers which are often used in local oxidation and shallow trench isolation structures. Experiments to distinguish between elastic nitride behavior and viscous nitride behavior were performed. The results favor a viscous model of nitride deformation over an elastic model, and provide the first experimental estimates of thin-film, Si/sub 3/N/sub 4/ viscosity as a function of temperature. The viscosity of thin nitride films depends on the stoichiometry of the deposited films and is well modeled by an Arrhenius dependence over typical processing temperatures. Based on these results, complex isolation topologies such as SWAMI can be modeled using the viscous models in SUPREM-IV.<>
  • Keywords
    CVD coatings; electronic engineering computing; nitridation; semiconductor device models; silicon compounds; viscosity; Arrhenius dependence; LPCVD; SUPREM-IV; SWAMI; Si/sub 3/N/sub 4/ layers; elastic nitride behavior; isolation topologies; local oxidation; nitride deformation; nitride/oxide isolation structures; shallow trench isolation structures; viscous nitride model; Chemicals; Deformable models; Oxidation; Semiconductor thin films; Temperature dependence; Topology; Viscosity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237094
  • Filename
    237094