Title :
Non-equilibrium diffusion process modeling based on three-dimensional simulator and a regulated point-defect injection experiment
Author :
Okada, T.K. ; Kambayashi, S. ; Onga, S. ; Mizushima, I. ; Yamabe, K. ; Matsunaga, J.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Presents two novel sophisticated experimental procedures for precise estimation of Si interstitial and vacancy diffusion coefficients, supported with a result from a three-dimensional process simulation system. One is impurity profile monitoring under well-controlled injected flux of point defects in three dimensional space, while the other one is in-situ TEM (transmission electron microscope) observation of the regrowth region damaged with Si ion-implantation. The authors also present a proposal for nonequilibrium Si self-diffusion process modeling based on these results. Application of the model to the ULSI process design phase is discussed.<>
Keywords :
elemental semiconductors; impurity-defect interactions; point defects; self-diffusion in solids; silicon; TEM; ULSI process design phase; impurity profile monitoring; regrowth region; regulated point-defect injection; self-diffusion process modeling; three-dimensional simulator; vacancy diffusion coefficients; Analytical models; Impurities; Monitoring; Oxidation; Phase estimation; Predictive models; Process design; Proposals; Silicidation; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237096
