DocumentCode
3317308
Title
Analysis of thermal performance of InGaP/InGaAlP quantum wells for high-power red laser diodes
Author
Qiu, Bocang ; McDougall, Stewart ; Yanson, Dan
Author_Institution
Intense Ltd., Glasgow
fYear
2008
fDate
1-4 Sept. 2008
Firstpage
69
Lastpage
70
Abstract
The effect quantum well (QW) strain on the thermal performance of InGaP/InGaAlP lasers emitting at around 635 nm is investigated theoretically. It is found that compressively-strained QWs offer superior thermal performance due to a reduced electron leakage.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; internal stresses; laser theory; quantum well lasers; semiconductor quantum wells; InGaP-InGaAlP; compressive strain; electron leakage; high-power red laser diode; quantum well laser; quantum well strain; thermal performance; Diode lasers; Electrons; Laser theory; Optical materials; Performance analysis; Photonic band gap; Power lasers; Quantum well lasers; Temperature; Waveguide lasers; InGaAlP; Red lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location
Nottingham
Print_ISBN
978-1-4244-2307-1
Type
conf
DOI
10.1109/NUSOD.2008.4668246
Filename
4668246
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