DocumentCode :
3317360
Title :
Evaluation of eutectic solder bump interconnect technology
Author :
Beddingfield, Craig ; Tan, Qing ; Mistry, Addi
Author_Institution :
Motorola Inc., Austin, TX, USA
fYear :
1999
fDate :
1999
Firstpage :
131
Lastpage :
134
Abstract :
This paper describes the electroplated solder bump process and provides results from evaluations of the reliability performance and mechanical integrity of the bump interconnect technology for direct chip attach applications. Evaluations include studying the effects of several variables, including (a) the solder bump volume (determined by bump height and diameter), (b) the integrated circuit bond pad configuration (using various passivation opening and under bump metallization diameters), (c) the UBM stud thickness and (d) the underfill material type. The analysis of each of these variables as main effects and, in most cases, interaction effects was achieved by performing mechanical and environmental testing, including solder bump and under bump metallization (UBM) shear strength, die tensile pull, air-to-air temperature cycling (AATC) at a range of -55/125°C and cross-sectional analysis. The intent of this study was to determine the significance of the variables and demonstrate successful reliability performance
Keywords :
electroplating; encapsulation; environmental testing; eutectic alloys; flip-chip devices; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; lead alloys; mechanical testing; passivation; shear strength; soldering; tensile testing; thermal stresses; tin alloys; -55 to 125 C; SnPb; SnPb eutectic bumps; UBM shear strength; UBM stud thickness; air-to-air temperature cycling; bump diameter; bump height; bump interconnect technology; cross-sectional analysis; die tensile pull; direct chip attach applications; electroplated solder bump process; environmental testing; eutectic solder bump interconnect technology; integrated circuit bond pad configuration; interaction effects; mechanical integrity; mechanical testing; passivation opening; reliability performance; solder bump shear strength; solder bump volume; under bump metallization; under bump metallization shear strength; underfill material type; Bonding; Circuit testing; Inorganic materials; Integrated circuit interconnections; Integrated circuit metallization; Integrated circuit reliability; Integrated circuit technology; Passivation; Performance analysis; Performance evaluation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Manufacturing Technology Symposium, 1999. Twenty-Fourth IEEE/CPMT
Conference_Location :
Austin, TX
ISSN :
1089-8190
Print_ISBN :
0-7803-5502-4
Type :
conf
DOI :
10.1109/IEMT.1999.804807
Filename :
804807
Link To Document :
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