InAlAs/InGaAs HBTs using magnesium p-type dopant

Author

Miura, A. ; Yakihara, T. ; Uchida, S. ; Oka, S.

Author_Institution

Yokogawa Electr. Corp., Tokyo, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

681

Lastpage

684

Abstract

The characteristics of Mg as a dopant in GaAs, AlGaAs, and InGaAs were studied to investigate its use as an alternative to the extremely hazardous Be widely used as a compound semiconductor p-type dopant in MBE (molecular beam epitaxy) growth. It is shown that doping with Mg is possible in all of these semiconductors at 1*10/sup 19//cm/sup 3/ and above. InAlAs/InGaAs HBTs (heterojunction bipolar transistors) using Mg for the p-type base dopant were fabricated experimentally, yielding good results with f/sub t/=32 GHz despite a large 3000-AA base thickness, a dual emitter of 2 mu m*5 mu m and a 220 mu m/sup 2/ base-collector junction area. This demonstrates that Mg is thoroughly usable as a p-type dopant for compound semiconductor devices.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; magnesium; molecular beam epitaxial growth; semiconductor epitaxial layers; 3000 AA; 32 GHz; HBTs; III-V semiconductors; MBE; base-collector junction area; compound semiconductor devices; dual emitter; p-type dopant; Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Magnesium; Molecular beam epitaxial growth; Semiconductor device doping; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237108

Filename

237108