Title :
Effects of carrier escape and capture processes on quantum well solar cells
Author :
Tsai, Chin-Yi ; Tsai, Chin-Yao
Author_Institution :
Dept. of Appl. Phys., Nat. Univ. of Kaohsiung, Kaohsiung
Abstract :
A theoretical model is proposed to study the effects of carrier escape and capture processes on the photocurrent of quantum well solar cells (QWSCs). The results show that solar cells with very deep QWs will suffer from extremely slow escape processes and their photocurrent can be inferior to their bulk counterparts. The optimal band gap energies of QW materials for achieving the maximum photocurrent are also calculated and discussed.
Keywords :
III-V semiconductors; electron traps; energy gap; gallium arsenide; hole traps; indium compounds; photoconductivity; quantum well devices; semiconductor device models; semiconductor quantum wells; solar cells; GaAs-InGaAs; QWSC model; band gap energy; carrier capture process; carrier escape; photocurrent; quantum well solar cell; Absorption; Charge carrier lifetime; Laser modes; PIN photodiodes; Photoconductivity; Photonic band gap; Photovoltaic cells; Physics; Quantum mechanics; Sun;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668251
