High-gain, high-speed InGaAs/InP heterojunction bipolar transistors

Author

Kyono, C.S. ; Cheung, P. ; Pinzone, C.J. ; Gerrard, N.D. ; Bustami, T. ; Maziar, C.M. ; Neikirk, D.P. ; Dupuis, R.D.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

677

Lastpage

680

Abstract

Reports high-quality InGaAs/InP heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition (MOCVD) utilizing a wide base structure and exhibiting behavior suggesting good alignment of the electrical and metallurgical junctions. Excellent DC and RF HBT characteristics were obtained with common-emitter DC current gains up to 1.5*10/sup 3/, small-signal current gains up to 3.9*10/sup 3/, and unity-gain cutoff frequencies up to 15 GHz. The excellent gain and speed performance of these HBTs is attributed to the exceptional quality of the MOCVD-grown material, the good control over Zn diffusion out of the base, and the existence of a doping-induced drift field in the p-type extended base.<>

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; III-V semiconductors; InGaAs-InP; RF HBT characteristics; common-emitter DC current gains; doping-induced drift field; heterojunction bipolar transistors; metallurgical junctions; metalorganic chemical vapor deposition; p-type extended base; small-signal current gains; unity-gain cutoff frequencies; wide base structure; Chemical vapor deposition; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MOCVD; Performance gain; Radio frequency; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237109

Filename

237109