Title :
High-gain, high-speed InGaAs/InP heterojunction bipolar transistors
Author :
Kyono, C.S. ; Cheung, P. ; Pinzone, C.J. ; Gerrard, N.D. ; Bustami, T. ; Maziar, C.M. ; Neikirk, D.P. ; Dupuis, R.D.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Reports high-quality InGaAs/InP heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition (MOCVD) utilizing a wide base structure and exhibiting behavior suggesting good alignment of the electrical and metallurgical junctions. Excellent DC and RF HBT characteristics were obtained with common-emitter DC current gains up to 1.5*10/sup 3/, small-signal current gains up to 3.9*10/sup 3/, and unity-gain cutoff frequencies up to 15 GHz. The excellent gain and speed performance of these HBTs is attributed to the exceptional quality of the MOCVD-grown material, the good control over Zn diffusion out of the base, and the existence of a doping-induced drift field in the p-type extended base.<>
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; heterojunction bipolar transistors; indium compounds; III-V semiconductors; InGaAs-InP; RF HBT characteristics; common-emitter DC current gains; doping-induced drift field; heterojunction bipolar transistors; metallurgical junctions; metalorganic chemical vapor deposition; p-type extended base; small-signal current gains; unity-gain cutoff frequencies; wide base structure; Chemical vapor deposition; Cutoff frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; MOCVD; Performance gain; Radio frequency; Zinc;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237109
