Comparison of pnp AlGaAs/GaAs heterojunction bipolar transistor with and without base quasielectric field

Author

Liu, W. ; Hill, D. ; Costa, D. ; Harris, J.S.

Author_Institution

Solid State Lab., Stanford Univ., CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

669

Lastpage

672

Abstract

Two sets of pnp AlGaAs/GaAs heterojunction bipolar transistors (HBTs) compatible with planar processing have been fabricated using a dual selective etching technique. Both sets of HBTs have a 300-AA strained InGaAs base; one has a built-in base quasielectric field while the other does not. The presence of a built-in base quasielectric field is shown to greatly reduce the base transit time for pnp transistors. The highest measured f/sub T/ and f/sub max/ are 23.3 GHz and 40 GHz, respectively. These are the highest reported values for pnp HBTs, and it is believed that these are limited by parasitic resistances.<>

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; heterojunction bipolar transistors; 23.3 GHz; 300 AA; 40 GHz; AlGaAs-GaAs; HBTs; III-V semiconductors; base quasielectric field; base transit time; dual selective etching technique; heterojunction bipolar transistor; parasitic resistances; planar processing; Electrical resistance measurement; Etching; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237111

Filename

237111