Title :
High speed VCSELs with separated quantum wells
Author :
Lysak, V.V. ; Safonov, I.M. ; Song, Y.M. ; Sukhoivanov, I.A. ; Lee, Yong Tak
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju
Abstract :
In this work, the simulation of the 980 nm InGaAs intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) with separated triplets of quantum wells (STQW) is presented. We analyze the thermal, electrical and optical properties of such devices. Results of simulations show the larger optical power efficiency and higher modulation bandwidth for devices with included STQW.
Keywords :
III-V semiconductors; indium compounds; quantum wells; surface emitting lasers; InGaAs; intracavity contacted oxide confined VCSEL; separated quantum wells; vertical-cavity surface-emitting lasers; wavelength 980 nm; Bandwidth; Gallium arsenide; High speed optical techniques; Optical modulation; Optical refraction; Optical resonators; Optical variables control; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668256
