DocumentCode
3317495
Title
High speed VCSELs with separated quantum wells
Author
Lysak, V.V. ; Safonov, I.M. ; Song, Y.M. ; Sukhoivanov, I.A. ; Lee, Yong Tak
Author_Institution
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju
fYear
2008
fDate
1-4 Sept. 2008
Firstpage
89
Lastpage
90
Abstract
In this work, the simulation of the 980 nm InGaAs intracavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) with separated triplets of quantum wells (STQW) is presented. We analyze the thermal, electrical and optical properties of such devices. Results of simulations show the larger optical power efficiency and higher modulation bandwidth for devices with included STQW.
Keywords
III-V semiconductors; indium compounds; quantum wells; surface emitting lasers; InGaAs; intracavity contacted oxide confined VCSEL; separated quantum wells; vertical-cavity surface-emitting lasers; wavelength 980 nm; Bandwidth; Gallium arsenide; High speed optical techniques; Optical modulation; Optical refraction; Optical resonators; Optical variables control; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location
Nottingham
Print_ISBN
978-1-4244-2307-1
Type
conf
DOI
10.1109/NUSOD.2008.4668256
Filename
4668256
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