Title :
A 1.8 GHz GM-C 10th Order Chebyshev filter implemented IN A 0.35 µm SiGe RF BiCMOS technology for telecommunications
Author :
Cojan, Radu Adrian ; Delacressonnière, Bruno
Author_Institution :
Telecommun. & Inf. Technol., Tech. Univ. Gh. Asachi, Iasi, Romania
Abstract :
In this paper, a 10th Order Chebyshev Gm-C active filter in a standard 0.35 μm SiGe BiCMOS process is presented. The filter has a simulated bandwidth of 75 MHz in the 1800 MHz frequency domain, 50 dB rejection in the stop band, a 6V power supply, and it is suitable for use in GSM 1800 applications. The calculations included in this paper can be considered a methodology for designing a real, implementable bandpass filter in any technology.
Keywords :
BiCMOS analogue integrated circuits; Chebyshev filters; Ge-Si alloys; UHF filters; band-pass filters; cellular radio; semiconductor materials; Chebyshev Gm-C active filter; GSM 1800 applications; RF BiCMOS technology; SiGe; bandpass filter; bandwidth 75 MHz; frequency 1.8 GHz; simulated bandwidth; size 0.35 mum; stop band rejection; telecommunications; voltage 6 V; Band pass filters; Bandwidth; Capacitors; Chebyshev approximation; Integrated circuit modeling; Transfer functions;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650529
