Title :
Integrated waveguide-photodetector using Si/SiGe multiple quantum wells for long wavelength applications
Author :
Kesan, V.P. ; May, P.G. ; Bassous, E. ; Iyer, S.S.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
An Si/SiGe integrated rib waveguide-photodetector for long wavelength applications has been fabricated. Low-loss (1-2 dB/cm at 1.3 mu m) silicon waveguides on SOI (silicon-on-insulator) have been fabricated. Remote coupling of optical fiber to photodetector through the silicon waveguide was successfully accomplished. The integrated waveguide-P-i-N detectors exhibited low reverse leakage currents (10-30 pA/ mu m/sup 2/ at 15 V reverse bias) and 50% internal quantum efficiency at 1.1 mu m, with a frequency response bandwidth of 1-2 GHz. These results show promise for an integrated preamplifier-detector for an all Si-based long wavelength receiver.<>
Keywords :
Ge-Si alloys; elemental semiconductors; integrated optoelectronics; optical fibres; photodetectors; semiconductor materials; semiconductor quantum wells; silicon; 1 to 2 GHz; 1.3 micron; SOI; Si-SiGe multiple quantum wells; frequency response bandwidth; integrated preamplifier-detector; integrated rib waveguide-photodetector; internal quantum efficiency; long wavelength applications; optical fiber; p-i-n detectors; remote coupling; reverse leakage currents; Detectors; Germanium silicon alloys; Leak detection; Leakage current; Optical coupling; Optical fibers; Optical waveguides; Photodetectors; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237118
