DocumentCode
3317621
Title
Quasi-supercontinuum interband lasing characteristics of quantum dot nanostructures
Author
Tan, C.L. ; Wang, Y. ; Djie, H.S. ; Ooi, B.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
fYear
2008
fDate
1-4 Sept. 2008
Firstpage
103
Lastpage
104
Abstract
We present the first analysis of wideband-stimulated emission in semiconductor quantum-dot laser. Our theoretical model reveals critical occurrence of broadband lasing when the energy spacing between quantized energy states (DeltaE) is comparable to dot inhomogeneity.
Keywords
laser theory; nanostructured materials; quantum dot lasers; semiconductor quantum dots; stimulated emission; supercontinuum generation; broadband lasing; dot inhomogeneity; quantized energy states; quantum dot nanostructure; quasisupercontinuum interband lasing; semiconductor quantum dot laser; wideband-stimulated emission; Bandwidth; Biomedical optical imaging; Energy states; Equations; Laser excitation; Laser modes; Nanostructures; Quantum dots; Quantum mechanics; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location
Nottingham
Print_ISBN
978-1-4244-2307-1
Type
conf
DOI
10.1109/NUSOD.2008.4668263
Filename
4668263
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