Title :
Single crystal silicon micro-actuators
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
A novel process suitable for fabricating single-crystal silicon microactuators is described. The process utilizes boron-diffused silicon etch stop to define the silicon microstructure thickness and a dry etch process to form narrow and deep trenches, followed by a silicon-to-glass bonding step and subsequent unmasked wafer dissolution. For rotational microactuators, polysilicon trench filling and sacrificial layer patterning are added to define a rotor stopper. The process successfully provided linear (stepped and resonant) and rotational (side-drive with rotor poles and harmonic side-drive) microactuators.<>
Keywords :
electric actuators; elemental semiconductors; etching; micromechanical devices; silicon; Si; deep trenches; dry etch process; etch stop; harmonic side-drive; linear actuators; microactuators; microstructure thickness; polysilicon trench filling; rotational actuators; rotor stopper; sacrificial layer patterning; unmasked wafer dissolution; Crystal microstructure; Dry etching; Filling; Microactuators; Resonance; Silicon; Wafer bonding;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237121