DocumentCode
3317649
Title
Single crystal silicon micro-actuators
Author
Suzuki, K.
Author_Institution
NEC Corp., Kanagawa, Japan
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
625
Lastpage
628
Abstract
A novel process suitable for fabricating single-crystal silicon microactuators is described. The process utilizes boron-diffused silicon etch stop to define the silicon microstructure thickness and a dry etch process to form narrow and deep trenches, followed by a silicon-to-glass bonding step and subsequent unmasked wafer dissolution. For rotational microactuators, polysilicon trench filling and sacrificial layer patterning are added to define a rotor stopper. The process successfully provided linear (stepped and resonant) and rotational (side-drive with rotor poles and harmonic side-drive) microactuators.<>
Keywords
electric actuators; elemental semiconductors; etching; micromechanical devices; silicon; Si; deep trenches; dry etch process; etch stop; harmonic side-drive; linear actuators; microactuators; microstructure thickness; polysilicon trench filling; rotational actuators; rotor stopper; sacrificial layer patterning; unmasked wafer dissolution; Crystal microstructure; Dry etching; Filling; Microactuators; Resonance; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237121
Filename
237121
Link To Document