• DocumentCode
    3317649
  • Title

    Single crystal silicon micro-actuators

  • Author

    Suzuki, K.

  • Author_Institution
    NEC Corp., Kanagawa, Japan
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    625
  • Lastpage
    628
  • Abstract
    A novel process suitable for fabricating single-crystal silicon microactuators is described. The process utilizes boron-diffused silicon etch stop to define the silicon microstructure thickness and a dry etch process to form narrow and deep trenches, followed by a silicon-to-glass bonding step and subsequent unmasked wafer dissolution. For rotational microactuators, polysilicon trench filling and sacrificial layer patterning are added to define a rotor stopper. The process successfully provided linear (stepped and resonant) and rotational (side-drive with rotor poles and harmonic side-drive) microactuators.<>
  • Keywords
    electric actuators; elemental semiconductors; etching; micromechanical devices; silicon; Si; deep trenches; dry etch process; etch stop; harmonic side-drive; linear actuators; microactuators; microstructure thickness; polysilicon trench filling; rotational actuators; rotor stopper; sacrificial layer patterning; unmasked wafer dissolution; Crystal microstructure; Dry etching; Filling; Microactuators; Resonance; Silicon; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237121
  • Filename
    237121