• DocumentCode
    3317671
  • Title

    Lead zirconate titanate (PZT) thin films in surface-micromachined sensor structures

  • Author

    Tamagawa, T. ; Polla, D.L. ; Hsueh, C.C.

  • Author_Institution
    Minnesota Univ., Minneapolis, MN, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    617
  • Lastpage
    620
  • Abstract
    The suitability of ferroelectric lead zirconate titanate (PZT) thin films for use in microsensor structures is demonstrated. Sensors based on the integration of surface micromachining techniques with sol-gel deposition of PZT films have been fabricated and show promise for sensing schemes based on direct charge detection. The piezoelectric coupling coefficients are between one and two orders of magnitude higher than those for nonferroelectrics such as zinc oxide. The magnitude of the dipole moment offers the possibility of enhanced pyroelectric detection as well, although the high dielectric constant and loss tangent of the films make encapsulation of the films necessary. A significant dipole moment exists in the as-deposited and annealed film prior to any deliberate poling. Sol-gel processing of the PZT films poses a more difficult integration problem that does sputter-deposition, but the techniques remain compatible with integrated circuit processing, assuming that surface micromachining techniques are used.<>
  • Keywords
    electric sensing devices; ferroelectric devices; lead compounds; piezoelectric thin films; piezoelectric transducers; pyroelectric devices; sol-gel processing; PZT; PbZrO3TiO3; dielectric constant; dipole moment; direct charge detection; integrated circuit processing; loss tangent; microsensor structures; piezoelectric coupling coefficients; pyroelectric detection; sol-gel deposition; surface-micromachined sensor structures; Ferroelectric films; Ferroelectric materials; High-K gate dielectrics; Micromachining; Microsensors; Piezoelectric films; Pyroelectricity; Titanium compounds; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237123
  • Filename
    237123