DocumentCode
3317671
Title
Lead zirconate titanate (PZT) thin films in surface-micromachined sensor structures
Author
Tamagawa, T. ; Polla, D.L. ; Hsueh, C.C.
Author_Institution
Minnesota Univ., Minneapolis, MN, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
617
Lastpage
620
Abstract
The suitability of ferroelectric lead zirconate titanate (PZT) thin films for use in microsensor structures is demonstrated. Sensors based on the integration of surface micromachining techniques with sol-gel deposition of PZT films have been fabricated and show promise for sensing schemes based on direct charge detection. The piezoelectric coupling coefficients are between one and two orders of magnitude higher than those for nonferroelectrics such as zinc oxide. The magnitude of the dipole moment offers the possibility of enhanced pyroelectric detection as well, although the high dielectric constant and loss tangent of the films make encapsulation of the films necessary. A significant dipole moment exists in the as-deposited and annealed film prior to any deliberate poling. Sol-gel processing of the PZT films poses a more difficult integration problem that does sputter-deposition, but the techniques remain compatible with integrated circuit processing, assuming that surface micromachining techniques are used.<>
Keywords
electric sensing devices; ferroelectric devices; lead compounds; piezoelectric thin films; piezoelectric transducers; pyroelectric devices; sol-gel processing; PZT; PbZrO3TiO3; dielectric constant; dipole moment; direct charge detection; integrated circuit processing; loss tangent; microsensor structures; piezoelectric coupling coefficients; pyroelectric detection; sol-gel deposition; surface-micromachined sensor structures; Ferroelectric films; Ferroelectric materials; High-K gate dielectrics; Micromachining; Microsensors; Piezoelectric films; Pyroelectricity; Titanium compounds; Transistors; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237123
Filename
237123
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