DocumentCode :
3317700
Title :
The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs
Author :
Haxha, V. ; Garg, R. ; Migliorato, M.A. ; Drouzas, I.W. ; Ulloa, J.M. ; Koenraad, P.M. ; Steer, M.J. ; Liu, H.Y. ; Hopkinson, M. ; Mowbray, D.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Univ. of Manchester, Manchester
fYear :
2008
fDate :
1-4 Sept. 2008
Firstpage :
111
Lastpage :
112
Abstract :
In this paper we show the use of an optimally parameterized empirical potential of the Abell-Tersoff type for atomistic simulations of the elastic properties of the epitaxially grown quaternary alloy InGaAsSb. We find that the strain energy as a function of composition does not follow intuitive averages between the binary constituents. Furthermore we will provide an explanation for the often observed decomposition into ternary components. The predictions of our model appear to be substantiated by experimental evidence of growth of InAs self assembled quantum dots capped by GaSbAs.
Keywords :
III-V semiconductors; decomposition; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum dots; Abel-Tersoff potentials; InGaAsSb-GaAs; atomistic simulations; decomposition; elastic properties; epitaxial growth; quaternary alloy; self assembled quantum dots; Atomic layer deposition; Capacitive sensors; Gallium arsenide; III-V semiconductor materials; Lattices; Physics; Potential energy; Semiconductor materials; Semiconductor process modeling; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
Type :
conf
DOI :
10.1109/NUSOD.2008.4668267
Filename :
4668267
Link To Document :
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