Successful application of the 8-band k·p framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling

Author

Fujisawa, T. ; Sato, T. ; Mitsuhara, M. ; Kakitsuka, T. ; Yamanaka, T. ; Kondo, Y. ; Kano, F.

Author_Institution

NTT Photonics Labs., NTT Corp., Atsugi

fYear

2008

fDate

1-4 Sept. 2008

Firstpage

113

Lastpage

114

Abstract

Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kmiddotp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2%. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 % calculated by 8-band model are in very good agreement with those obtained by experiment, showing the validity of the results presented here.

Keywords

III-V semiconductors; conduction bands; gallium arsenide; indium compounds; infrared spectra; internal stresses; k.p calculations; photoluminescence; semiconductor quantum wells; valence bands; 6-band kmiddotp theory; 8-band kmiddotp framework; InGaAs-InGaAs; absorption spectra; band-edge optical property; conduction-valence band coupling; photoluminescence; strained quantum well; Absorption; Capacitive sensors; Conducting materials; Effective mass; Indium gallium arsenide; Indium phosphide; Laser modes; Optical coupling; Photoluminescence; Quantum mechanics;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on

Conference_Location

Nottingham

Print_ISBN

978-1-4244-2307-1

Type

conf

DOI

10.1109/NUSOD.2008.4668268

Filename

4668268