Lucky-hole injection induced by band-to-band tunneling leakage in stacked gate transistors

Author

Yoshikawa, K. ; Mori, S. ; Sakagami, E. ; Ohshima, Y. ; Kaneko, Y. ; Arai, N.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

577

Lastpage

580

Abstract

The band-to-band tunneling leakage characteristics of thin oxide MOSFETs are investigated by utilizing stacked-gate structure FETs. The behavior of threshold voltage variations under drain stress with open-circuit source is analyzed in detail. A simple lucky hole injection model is proposed to explain the behavior. Program-disturb phenomena in EPROM cells were well described by the model. The depletion layer along the channel formed by the applied drain voltage gives energy to cold holes created by band-to-band tunneling. Such lucky holes are injected easily and reach the gate electrode.<>

Keywords

EPROM; MOS integrated circuits; insulated gate field effect transistors; integrated memory circuits; semiconductor device models; tunnelling; EPROM cells; FETs; band-to-band tunneling leakage; cold holes; drain stress; lucky hole injection model; open-circuit source; program-disturb phenomena; stacked gate transistors; thin oxide MOSFETs; threshold voltage variations; EPROM; Electrodes; FETs; MOSFETs; Stress; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237132

Filename

237132