Title :
Roles of oxide trapped charge and generated interface states on GIDL under hot-carrier stressing
Author :
Lo, G.-Q. ; Kwong, D.-L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
The effects of hot-carrier-induced oxide electron trapped charge ( Delta N/sub et/) and generated interface state ( Delta D/sub it/) on the gate-induced drain leakage (GIDL) current in n-channel MOSFETs with thin gate oxides ( approximately 86 AA) have been studied and established. The dependence of GIDL degradation characteristics on hot-carrier stress conditions and stress time, and the damage recovery behavior of GIDL have been extensively characterized. It is found that Delta N/sub et/ rather than Delta D/sub it/ is the primary factor responsible for GIDL degradation at high V/sub d/ regions. However, Delta D/sub it/ significantly enhances GIDL at low V/sub d/ regions (>
Keywords :
electron traps; hot carriers; insulated gate field effect transistors; interface electron states; reliability; GIDL; damage recovery behavior; drain leakage conduction; gate-induced drain leakage; generated interface states; hot-carrier stress conditions; hot-carrier stressing; n-channel MOSFETs; oxide trapped charge; Degradation; Electron traps; Hot carrier effects; Hot carriers; Interface states; MOSFETs; Stress; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237137
