Effects of boron penetration and resultant limitations in ultra thin pure-oxide and nitrided-oxide gate-films

Author

Morimoto, T. ; Momose, H.S. ; Ozawa, Y. ; Yamabe, K. ; Iwai, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

429

Lastpage

432

Abstract

The boron penetration effect was compared for p/sup +/ poly gate PMOSFETs with pure oxide gates and nitrided oxide gates. For a gate thickness of 6.5 nm, reduced boron dosage and rapid thermal processing solve the problem of boron penetration in the pure oxide case. However, when the film thickness is less than 6.5 nm, only a nitrided oxide film can solve the problem. From the results of EDX analysis in nitrided oxide films, it was found that nitrogen build-up at the interface is small and that a nitrogen concentration of only a few percent leads to complete suppression of boron penetration down to the 2 nm range of film thickness. Excellent characteristics in 2.6 nm nitrided oxide gate p-MOSFETs, free from boron penetration effects, were demonstrated.<>

Keywords

boron; dielectric thin films; insulated gate field effect transistors; semiconductor-insulator boundaries; 2 to 6.5 nm; 2.6 nm; B penetration effect; EDX analysis; PMOSFETs; Si:B; SiNO; SiO/sub 2/; gate thickness; nitrided-oxide gate-films; p/sup +/ poly gate; pure oxide gates; rapid thermal processing; ultrathin films; Boron; Lead compounds; MOSFET circuits; Nitrogen; Rapid thermal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237140

Filename

237140