Endurance properties of ferroelectric PZT thin films

Author

Moazzami, R. ; Hu, C. ; Shepherd, W.H.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

417

Lastpage

420

Abstract

The fatigue behavior of sol-gel derived PZT (lead zirconate titanate) thin films was studied to determine the endurance of nonvolatile ferroelectric memories. The observed capacitance characteristics following polarization cycling are consistent with a domain pinning model. Cycling at low fields improves the endurance significantly. In addition, poling at fields above the cycling field increases the initial remanent polarization and restores the polarization lost from cycling. Both poling and low-field operation may be promising means of improving ferroelectric-memory endurance.<>

Keywords

dielectric polarisation; fatigue; ferroelectric storage; ferroelectric thin films; lead compounds; DRAM; NVRAM; PbZrO3TiO3; capacitance characteristics; domain pinning model; fatigue behavior; ferroelectric PZT thin films; ferroelectric-memory endurance; low-field operation; nonvolatile ferroelectric memories; polarization cycling; poling; sol-gel; Capacitance-voltage characteristics; Fatigue; Ferroelectric materials; Nonvolatile memory; Polarization; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237143

Filename

237143