Title :
A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability
Author :
Okumura, Y. ; Shirahata, M. ; Okudaira, T. ; Hachisuka, A. ; Arima, H. ; Matsukawa, T. ; Tsubouchi, N.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET was investigated theoretically and experimentally. Using an analytical model, it is verified that the mobility of the NUDC MOSFET is increased as compared with that of the conventional channel MOSFET. Also, the V/sub th/ lowering of the NUDC MOSFET is suppressed as compared with that of the conventional channel MOSFET. The NUDC MOSFET was fabricated by the oblique rotating ion implantation technique, and the theoretical predictions were confirmed experimentally.<>
Keywords :
carrier mobility; insulated gate field effect transistors; ion implantation; semiconductor device models; MOSFET; analytical model; high current drivability; mobility; oblique rotating ion implantation; source-to-drain nonuniformly doped channel; threshold voltage controllability; Analytical models; Ion implantation; MOSFET circuits;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237149
