DocumentCode
3317974
Title
A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability
Author
Okumura, Y. ; Shirahata, M. ; Okudaira, T. ; Hachisuka, A. ; Arima, H. ; Matsukawa, T. ; Tsubouchi, N.
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
391
Lastpage
394
Abstract
A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET was investigated theoretically and experimentally. Using an analytical model, it is verified that the mobility of the NUDC MOSFET is increased as compared with that of the conventional channel MOSFET. Also, the V/sub th/ lowering of the NUDC MOSFET is suppressed as compared with that of the conventional channel MOSFET. The NUDC MOSFET was fabricated by the oblique rotating ion implantation technique, and the theoretical predictions were confirmed experimentally.<>
Keywords
carrier mobility; insulated gate field effect transistors; ion implantation; semiconductor device models; MOSFET; analytical model; high current drivability; mobility; oblique rotating ion implantation; source-to-drain nonuniformly doped channel; threshold voltage controllability; Analytical models; Ion implantation; MOSFET circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237149
Filename
237149
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