Title :
AlAs etch-stop layers for InGaAlAs/InP heterostructure devices and circuits
Author :
Broekaert, T.P.E. ; Fonstad, C.G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Wet chemical etching solutions have been developed that allow the selective etching of InP lattice matched InGaAlAs quaternary compounds using thin pseudomorphic AlAs layers as etch stops. The etch rate of In/sub 0.53/Ga/sub 0.47/As in the InGaAlAs etchant is found to be over 70 times the etch rate of AlAs, while the etch rate of In/sub 0.52/Al/sub 0.48/As is over 35 times that of the AlAs. The etch of AlAs does not etch InGaAlAs to any significant degree.<>
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; semiconductor junctions; semiconductor technology; AlAs etch-stop layers; In/sub 0.52/Al/sub 0.48/As; In/sub 0.53/Ga/sub 0.47/As; InGaAlAs; InGaAlAs-InP; InP; heterostructure devices; selective etching; thin pseudomorphic AlAs layers; wet chemical etching solutions; Chemical compounds; Indium phosphide; Lattices; Wet etching;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237161
