A large area 1.3-megapixel full-frame CCD image sensor with a lateral-overflow drain and a transparent gate electrode

Author

Kosman, S.L. ; Stevens, E.G. ; Cassidy, J.C. ; Chang, W.C. ; Roselle, P. ; Miller, W.A. ; Mehra, M. ; Burkey, B.C. ; Lee, T.H. ; Hawkins, G.A. ; Khosla, R.P.

Author_Institution

Eastman Kodak Co., Rochester, NY, USA

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

287

Lastpage

290

Abstract

A large-area, 1.3 million pixel, full-frame CCD (charge coupled device) image sensor has been developed that incorporates both a lateral-overflow drain (LOD) for antiblooming control and a transparent indium-tin oxide (ITO) gate electrode for increased photosensitivity. The LOD offers high responsivity, extremely linear photoresponse, and ultrahigh optical overload protection. The replacement of one polysilicon phase with ITO increases the quantum efficiency at 400 nm to 15.8% from the 1.5% for the standard double polysilicon gate electrode process. The LOD design allows for antiblooming suppression in excess of 43000 times the saturation signal while maintaining better than 1% nonlinearity.<>

Keywords

CCD image sensors; electrodes; indium compounds; 1.3 Mpixel; 15.8 percent; 400 nm; CCD image sensor; ITO; ITO gate electrode; InSnO; antiblooming; antiblooming control; blooming suppression; fabrication; full frame image sensor; lateral-overflow drain; linear photoresponse; optical overload protection; quantum efficiency; responsivity; transparent gate electrode; Charge coupled devices; Charge-coupled image sensors; Electrodes; Image sensors; Indium tin oxide; Optical saturation; Optical sensors; Pixel; Protection; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237173

Filename

237173