• DocumentCode
    3318331
  • Title

    High temperature SOI CMOS technology and circuit realization for applications up to 300°C

  • Author

    Kappert, Holger ; Kordas, Norbert ; Dreiner, Stefan ; Paschen, Uwe ; Kokozinski, Rainer

  • Author_Institution
    Fraunhofer Inst. for Microelectron. Circuits & Syst. IMS, Duisburg, Germany
  • fYear
    2015
  • fDate
    24-27 May 2015
  • Firstpage
    1162
  • Lastpage
    1165
  • Abstract
    Today an increasing number of applications in fields like power electronics or sensor signal conditioning are demanding for integrated circuits supporting an extended temperature range. Mixed signal circuits featuring analog circuitry, analog to digital converters as well as embedded microcontrollers and on-chip memories are requested to operate up to 300°C or even more. This paper outlines technological and design specific challenges as well as limiting factors for integrated circuits at high temperatures realized in a Silicon-on-Insulator (SOI) CMOS technology. The technology and circuit design techniques are presented based on a complex design example. Finally performance parameters of basic building blocks measured up to 300°C are shown.
  • Keywords
    CMOS integrated circuits; integrated circuit design; mixed analogue-digital integrated circuits; silicon-on-insulator; SOI CMOS technology; analog circuitry; analog to digital converters; embedded microcontrollers; integrated circuits; mixed signal circuits; on-chip memories; silicon-on-insulator CMOS technology; CMOS integrated circuits; CMOS technology; Leakage currents; Random access memory; Standards; Temperature distribution; Embedded Microcontroller; High Temperature; Mixed-Signal Design; Silicon-On-Insulator (SOI);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
  • Conference_Location
    Lisbon
  • Type

    conf

  • DOI
    10.1109/ISCAS.2015.7168845
  • Filename
    7168845