DocumentCode
3318331
Title
High temperature SOI CMOS technology and circuit realization for applications up to 300°C
Author
Kappert, Holger ; Kordas, Norbert ; Dreiner, Stefan ; Paschen, Uwe ; Kokozinski, Rainer
Author_Institution
Fraunhofer Inst. for Microelectron. Circuits & Syst. IMS, Duisburg, Germany
fYear
2015
fDate
24-27 May 2015
Firstpage
1162
Lastpage
1165
Abstract
Today an increasing number of applications in fields like power electronics or sensor signal conditioning are demanding for integrated circuits supporting an extended temperature range. Mixed signal circuits featuring analog circuitry, analog to digital converters as well as embedded microcontrollers and on-chip memories are requested to operate up to 300°C or even more. This paper outlines technological and design specific challenges as well as limiting factors for integrated circuits at high temperatures realized in a Silicon-on-Insulator (SOI) CMOS technology. The technology and circuit design techniques are presented based on a complex design example. Finally performance parameters of basic building blocks measured up to 300°C are shown.
Keywords
CMOS integrated circuits; integrated circuit design; mixed analogue-digital integrated circuits; silicon-on-insulator; SOI CMOS technology; analog circuitry; analog to digital converters; embedded microcontrollers; integrated circuits; mixed signal circuits; on-chip memories; silicon-on-insulator CMOS technology; CMOS integrated circuits; CMOS technology; Leakage currents; Random access memory; Standards; Temperature distribution; Embedded Microcontroller; High Temperature; Mixed-Signal Design; Silicon-On-Insulator (SOI);
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location
Lisbon
Type
conf
DOI
10.1109/ISCAS.2015.7168845
Filename
7168845
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