DocumentCode :
331835
Title :
InP-GaAs fused vertical coupler filters
Author :
Liu, Bin ; Shakouri, Ali ; Abraham, P. ; Chiu, Y.J. ; Zhang, S. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Volume :
1
fYear :
1998
fDate :
1-4 Dec 1998
Firstpage :
18
Abstract :
We demonstrate a novel vertical coupler structure based on wafer fusion technology that combines two different material systems: AlGaAs-GaAs with a low material dispersion at 1.55 μm and InGaAsP-InP with a high material dispersion. With a proper design, a very narrowband and polarization independent monolithic filter with separated inputs and outputs can be realized
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical directional couplers; optical dispersion; optical waveguide filters; wavelength division multiplexing; 1.55 mum; AlGaAs-GaAs; InGaAsP-InP; InP-GaAs; InP-GaAs fused vertical coupler filters; high material dispersion; low material dispersion; vertical coupler structure; very narrowband polarization independent monolithic filter; wafer fusion; Bandwidth; Directional couplers; Gallium arsenide; Indium phosphide; Narrowband; Optical filters; Optical waveguides; Polarization; Semiconductor waveguides; Wavelength division multiplexing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
Type :
conf
DOI :
10.1109/LEOS.1998.737711
Filename :
737711
Link To Document :
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