InP-GaAs fused vertical coupler filters

Author

Liu, Bin ; Shakouri, Ali ; Abraham, P. ; Chiu, Y.J. ; Zhang, S. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

18

Abstract

We demonstrate a novel vertical coupler structure based on wafer fusion technology that combines two different material systems: AlGaAs-GaAs with a low material dispersion at 1.55 μm and InGaAsP-InP with a high material dispersion. With a proper design, a very narrowband and polarization independent monolithic filter with separated inputs and outputs can be realized

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical directional couplers; optical dispersion; optical waveguide filters; wavelength division multiplexing; 1.55 mum; AlGaAs-GaAs; InGaAsP-InP; InP-GaAs; InP-GaAs fused vertical coupler filters; high material dispersion; low material dispersion; vertical coupler structure; very narrowband polarization independent monolithic filter; wafer fusion; Bandwidth; Directional couplers; Gallium arsenide; Indium phosphide; Narrowband; Optical filters; Optical waveguides; Polarization; Semiconductor waveguides; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737711

Filename

737711