Title :
A resistive-gate two-phase 2DEG CCD for III-V IR detectors
Author :
Song, J.-I. ; Fossum, E.R.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Abstract :
A device structure for two-phase operation of a two-dimensional electron gas charge-coupled device (2DEG CCD) has been demonstrated which exhibits a charge transfer efficiency exceeding 0.999 at 26 MHz. It also exhibits a large charge handling capacity (3.0 million electrons/pixel). The Al/sub 0.3/Ga/sub 0.7/As/GaAs modulation-doped heterostructure utilizes a resistive cermet gate with recesses to achieve two-phase operation. The structure is compatible with advanced III-V infrared detectors for monolithic integration in future orbiting imaging systems.<>
Keywords :
CCD image sensors; III-V semiconductors; aluminium compounds; gallium arsenide; infrared detectors; infrared imaging; semiconductor junctions; 26 MHz; 2DEG CCD; 99.9 percent; Al/sub 0.3/Ga/sub 0.7/As-GaAs; IR detectors; charge handling capacity; charge transfer efficiency; device structure; infrared detectors; modulation-doped heterostructure; monolithic integration; orbiting imaging systems; resistive cermet gate; semiconductors; two-phase operation; Ceramics; Charge coupled devices; Charge transfer; Electrons; Epitaxial layers; Gallium arsenide; III-V semiconductor materials; Infrared detectors; Monolithic integrated circuits; Optical imaging;
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1990.237178
