AlAsSb-based distributed Bragg reflectors for 1.55 μm VCSELs using InAlGaAs as high-index layer

Author

Hall, E. ; Kim, J. ; Naone, R. ; Kroemer, W. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

fYear

1998

fDate

1-4 Dec 1998

Firstpage

30

Abstract

Summary form only given. Arsenide-antimonide mixed group-V compounds are very attractive as materials for AlAsSb distributed Bragg reflectors (DBRs). Grown lattice-matched on InP, such DBRs, thanks primarily to the low refractive index of AlAsSb, would allow the monolithic growth of long-wavelength vertical cavity surface emitting lasers (VCSELs) with relatively few periods compared to traditional InP-InGaAsP DBRs

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; refractive index; semiconductor lasers; surface emitting lasers; 1.55 μm VCSELs; 1.55 mum; AlAsSb; AlAsSb distributed Bragg reflectors; AlAsSb-based distributed Bragg reflectors; DBRs; InAlGaAs high-index layer; InP; InP-InGaAsP; VCSELs; lattice-matched; long-wavelength vertical cavity surface emitting lasers; low refractive index; mixed group-V compounds; monolithic growth; Digital alloys; Dispersion; Distributed Bragg reflectors; Indium phosphide; Mirrors; Optical materials; Resonance; Surface morphology; Vertical cavity surface emitting lasers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.737717

Filename

737717