Title :
Comparison of GaInNAs grown by MOCVD and CBE
Author :
Miyamoto, T. ; Kageyama, T. ; Schlenker, D. ; Makino, S. ; Koyama, F. ; Iga, K.
Author_Institution :
RCQEE, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We investigated the difference between CBE and MOCVD grown GaInNAs. Photoluminescence characteristics showed similar tendency, while there are large differences in the nitrogen incorporation characteristics. Hydrogen in the nitrogen source may play an important role. Further improvement of GaInNAs quality will be achieved by clarifying the details of growth characteristics and mechanisms
Keywords :
III-V semiconductors; MOCVD; chemical beam epitaxial growth; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; CBE; GaInNAs; GaInNAs quality; MOCVD; growth characteristics; nitrogen incorporation characteristics; nitrogen source; photoluminescence characteristics; Crystalline materials; Gallium arsenide; Hydrogen; MOCVD; Material properties; Nitrogen; Optical materials; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737718
