A deep-submicron isolation technology with T-shaped oxide (TSO) structure

Author

Ishijima, T. ; Ikawa, E. ; Hamada, T. ; Fujiomoto, Y. ; Terada, K.

Author_Institution

NEC Corp., Tokyo, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

257

Lastpage

260

Abstract

T-shaped oxide (TSO) isolation has been developed to achieve deep-submicron isolation width for scaled devices. The TSO isolation structure consists of a slit in the silicon substrate filled with an oxide film and a cap oxide film covering it. The slit is narrower than the cap oxide film. Channel-stop boron ions are implanted into the slit sidewall region as well as the cap oxide bottom region through the cap oxide film. For n-channel MOSFETs with TSO isolation, a double hump in the subthreshold curve does not appear and the narrow channel effect is greatly reduced. A 0.3- mu m-wide TSO isolation structure shows excellent electrical characteristics.<>

Keywords

MOS integrated circuits; VLSI; boron; chemical vapour deposition; integrated circuit technology; ion implantation; oxidation; sputter etching; 0.3 micron; MOSICs; Si:B; T-shaped oxide structure; TSO isolation structure; VLSI; deep-submicron isolation technology; electrical characteristics; n-channel MOSFETs; narrow channel effect reduction; oxide filled slit; scaled devices; Boron; Electric variables; Isolation technology; MOSFETs; Semiconductor films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237180

Filename

237180